Recent Question/Assignment
write the answers in a step by step manner
Assignment -1 - Set - II
1. Describe all the mathematical equations involved in the Diffusion Capacitance model of a MOS Transistor with neat diagram. (CO1,10M)
2. Consider the nMOS transistor in a 0.6 pm process with gate oxide thickness of 50 A. The doping level is NA = 2 x 1019 cm-3 and the nominal threshold voltage is 0.6 V. The body is tied to ground with a substrate contact. How much does the threshold change at room temperature if the source is at 4 V instead of 0? (CO1, 5M)
3. The current in an enhancement mode NMOS transistor biased in saturation region was measured to be 2 mA at a drain source voltage of 2 V. When the drain source voltage was increased to 3 V while keeping gate source voltage same. The drain current increased to 3.03 mA. Use an appropriate drain current formula to calculate the channel length modulation parameter 1 (Ignore the negative sign) (in V-1). (CO1, 5M)
4. Sketch a transistor-level schematic for a compound CMOS logic gate for each of the following functions: (CO2, 5 + 5 = 10 M)
a) Y = [AB + C • (A + B)]’ b) Y = [(A + B). (C + D)]’
Assignment -1 - Set - II
1. Describe all the mathematical equations involved in the Diffusion Capacitance model of a MOS Transistor with neat diagram. (CO1,10M)
2. Consider the nMOS transistor in a 0.6 pm process with gate oxide thickness of 50 A. The doping level is NA = 2 x 1019 cm-3 and the nominal threshold voltage is 0.6 V. The body is tied to ground with a substrate contact. How much does the threshold change at room temperature if the source is at 4 V instead of 0? (CO1, 5M)
3. The current in an enhancement mode NMOS transistor biased in saturation region was measured to be 2 mA at a drain source voltage of 2 V. When the drain source voltage was increased to 3 V while keeping gate source voltage same. The drain current increased to 3.03 mA. Use an appropriate drain current formula to calculate the channel length modulation parameter 1 (Ignore the negative sign) (in V-1). (CO1, 5M)
4. Sketch a transistor-level schematic for a compound CMOS logic gate for each of the following functions: (CO2, 5 + 5 = 10 M)
a) Y = [AB + C • (A + B)]’ b) Y = [(A + B). (C + D)]’
Looking for answers ?
Recent Questions
Module code: BMA4005-20Module title: Professional PracticeAssignment: A1. Digital PosterWord count: 500Contribution to module mark: 40% of overall gradeAssessment type: IndividualWeight 40%Submission deadline:...Assessment Criteria for Written Report (20%)• Submission of a minimum 1500 to maximum 1800-words written report due from week 9. You will submit your written report one week after you have undertaken the...Assessment 2: (20%) Case Study Presentation Due Date weeks 10This assessment builds on your theoretical knowledge and tests your ability to apply this knowledge to practice.you are required to formulate...Assessment 2Assessment 2Report: 30%Word count: 1400 – 1600 wordsDue date: Sunday of Week 8DescriptionYou are playing the role of a community service worker supporting a young adult son who is 18 years...1500-1800 wordsInstructions From TutorPlease download the eTask3 spreadsheet from Canvas and save the eTask spread as an Excel file. The main content of the force method is taught in Lectures 6,7&8.eTask3.1 is a...ASSIGNMENT INSTRUCTIONSAssessment Practical assessmentAssessment code: 011Academic Year: 2023/2024Trimester: 2Module Title: Critical Perspectives on Cross-Border BusinessModule Code: MOD009194Level: 6Module...Show All Questions